Numéro
J. Phys. III France
Volume 2, Numéro 9, September 1992
Page(s) 1713 - 1726
DOI https://doi.org/10.1051/jp3:1992207
DOI: 10.1051/jp3:1992207
J. Phys. III France 2 (1992) 1713-1726

High power laser diodes

G. Volluet, B. Groussin, T. Fillardet, C. Carrière and A. Parent

Thomson Hybrides, Subsidary of THOMSON-CSF, 29 avenue Carnot, 91349 Massy Cedex, France

(Received 28 January 1992, revised 1st June 1992, accepted 1st June 1992)

Abstract
In this paper, we discuss specific technological requirements to obtain high power laser diodes. Our report is restricted to the components developed at Thomson Hybrides, with special emphasis on a new technology of monolithic surface emitting arrays.



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