J. Phys. III France
Volume 2, Numéro 9, September 1992
Page(s) 1727 - 1738
DOI: 10.1051/jp3:1992208
J. Phys. III France 2 (1992) 1727-1738

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

A. Accard, F. Brillouet, E. Duda, B. Fernier, G. Gelly, L. Goldstein, D. Leclerc and D. Lesterlin

Alcatel Alsthom Recherche, route de Nozay, 91460 Marcoussis, France

(Received 3 December 1991, accepted 28 February 1992)

A wide variety of lasers with multiquantum well structures have been sucessfully realized: 1.55  $\mu$m single longitudinal mode DFB laser (50 mW output power) : 1.48  $\mu$m Fabry-Perot pump source (190 mW output power) ; multiphase shift DFB laser with narrow linewidth ( <330 kHz) ; multielectrode laser usuable as FM transmitter (tunability 100 GHz with linewidth <1 MHz) ; multisection distributed Bragg reflector laser (tunability 375 GHz with 10 MHz linewidth). All these devices have been fabricated using Gas Source Molecular Beam Epitaxy (GSMBE) for the double heterostructure growth and Liquid Phase Epitaxy (LPE) for blocking layer regrowth. This process of fabrication leads to a good reproducibility and reliability.

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