| Numéro |
J. Phys. III France
Volume 3, Numéro 5, May 1993
|
|
|---|---|---|
| Page(s) | 1021 - 1032 | |
| DOI | https://doi.org/10.1051/jp3:1993179 | |
J. Phys. III France 3 (1993) 1021-1032
Free-carrier effects in GaAs single modulation-doped quantum well as applied to active Q-switching of injection lasers
V. S. Kalinovsky, T. V. Shubina, I. Yu. Shvechikov and A. A. ToropovA. F. Ioffe Physico-Technical Institute, Academy of Sciences, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia
(Received 23 January 1992, revised 23 October 1992, accepted 16 February 1993)
Abstract
Free carrier effects in a modulation-doped GaAs QW placed in the n-region
of a p-n junction were successfully used to obtain active Q-switching in a
two-section GaAs/A1GaAs DH laser structure. The modulator section uses the
blue shift of the QW absorption edge due to band filling by a 2D electron gas
whose concentration could be controlled between 0 and
cm
-2
by external bias voltage. Only about 100 mV of the modulating voltage was necessary
to provide stable active Q-switching. The threshold injection current density
ranged from 400 to 800 A/cm
2. The modulation bandwidth is estimated to be not
less than 4-5 GHz. A simple electrostatic model is suggested to describe
electrooptical phenomena in a modulation-doped QW which underlie the operation
of the device.
© Les Editions de Physique 1993