Journal de Physique III

High frequency analysis of fast devices using small-signal Monte Carlo simulations : application to a 0.1 μm-gate MODFET p. 1713

P. Dollfus, S. Galdin, C. Brisset et P. Hesto

DOI: https://doi.org/10.1051/jp3:1993231

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects p. 1719

P. Dollfus, P. Hesto, S. Galdin et C. Brisset

DOI: https://doi.org/10.1051/jp3:1993232

Laser cavity modelling p. 1729

I. Damakoa, J. Audounet, G. Bouyssou et G. Vassilieff

DOI: https://doi.org/10.1051/jp3:1993233

Low frequency noise of a 980 nm InGaAs/GaAs strained quantum well laser p. 1739

B. Orsal, J. M. Peransin, P. Signoret et K. Daulasim

DOI: https://doi.org/10.1051/jp3:1993234

Parasitic element influence on laser driver performances for 1.3 μm fiber optical communication p. 1751

N. Hassaine, K. Sauv, A. Konczykowska et R. Lefevre

DOI: https://doi.org/10.1051/jp3:1993235

High speed ( GHz) InGaAs/InP avalanche photodiodes grown by gas source molecular beam epitaxy with a thin quaternary grading layer for high bit rate ( Gbit/s) systems p. 1761

G. Ripoche, J.-L. Peyre, M. Lambert et S. Mottet

DOI: https://doi.org/10.1051/jp3:1993102

An electrooptic switching structure on III-V semiconductors using the coherent coupling of radiation modes p. 1769

Diaa Khalil et Smail Tedjini

DOI: https://doi.org/10.1051/jp3:1993236

Spectral responses in near-infrared of the mixed compounds III-V, ternary and quaternary, based on GaSb p. 1777

B. Mbow, N. Rezzoug, C. Peremarti, A. Mezerreg et C. Llinares

DOI: https://doi.org/10.1051/jp3:1993109

Low dimensionality semiconductors: modelling of excitons via a fractional-dimensional space p. 1783

P. Christol, P. Lefebvre et H. Mathieu

DOI: https://doi.org/10.1051/jp3:1993237

Characterization of III-V materials by optical interferometry p. 1791

P. C. Montgomery, P. Vabre, D. Montaner et J. P. Fillard

DOI: https://doi.org/10.1051/jp3:1993238

Dislocation slipping, a new technique to produce step-like surfaces, compatible with quantum confinement sizes p. 1803

F. Voillot, M. Goiran, C. Guasch, J. P. Peyrade, L. Dinh, A. Rocher et E. Bedel

DOI: https://doi.org/10.1051/jp3:1993239

Electronic properties of strained heterostructures p. 1809

Moulay Driss Rahmani et Pierre Masri

DOI: https://doi.org/10.1051/jp3:1993240

Characterization of Ga_1-xIn_xSb thin layers grown on GaAs substrate by infrared reflectivity p. 1819

A. Mezerreg, C. Llinares, N. Rezzoug et B. Mbow

DOI: https://doi.org/10.1051/jp3:1993241

Low noise ohmic contacts on n and p type GaSb p. 1825

M. Rolland, S. Gaillard, E. Villemain, D. Rigaud et M. Valenza

DOI: https://doi.org/10.1051/jp3:1993242

A vibration sensor, using telecommunication grade monomode fiber, immune to temperature variations p. 1835

F. Pigeon, S. Pelissier, A. Mure-Ravaud, H. Gagnaire, , S. I. Hosain et C. Veillas

DOI: https://doi.org/10.1051/jp3:1993243

Dispositif d'étude des décharges couronnes dans les gaz à pression élevée ou liquéfiés p. 1839

C. Marteau, G. Laulier, N. Bonifaci et A. Denat

DOI: https://doi.org/10.1051/jp3:1993244

Thermal modelling for an induction motor p. 1849

R. Glises, A. Miraoui et J. M. Kauffmann

DOI: https://doi.org/10.1051/jp3:1993245

Spectral impedance boundary condition (SIBC) method for a spherical perfect electric conductor (PEC) with an uniform biisotropic coating p. 1861

Dajun Cheng, Yushen Zhao et Weigan Lin

DOI: https://doi.org/10.1051/jp3:1993246

Atomic oxygen recombination at the wall in a time afterglow p. 1871

L. Magne, H. Coitout, G. Cernogora et G. Gousset

DOI: https://doi.org/10.1051/jp3:1993247

An improved directional growth apparatus for liquid crystals: applications to thermotropic and lyotropic systems p. 1891

P. Oswald, M. Moulin, P. Metz, J. C. Géminard, P. Sotta et L. Sallen

DOI: https://doi.org/10.1051/jp3:1993248

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Erratum

Erratum: The frequency control of laser diodes p. 1909

M. de Labachelerie, C. Latrasse, P. Kemssu et P. Cerez

DOI: https://doi.org/10.1051/jp3:1993277

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