High frequency analysis of fast devices using small-signal Monte Carlo simulations : application to a 0.1 μm-gate MODFET p. 1713 P. Dollfus, S. Galdin, C. Brisset and P. Hesto DOI: https://doi.org/10.1051/jp3:1993231 AbstractPDF (305.7 KB)References
Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects p. 1719 P. Dollfus, P. Hesto, S. Galdin and C. Brisset DOI: https://doi.org/10.1051/jp3:1993232 AbstractPDF (640.3 KB)References
Laser cavity modelling p. 1729 I. Damakoa, J. Audounet, G. Bouyssou and G. Vassilieff DOI: https://doi.org/10.1051/jp3:1993233 AbstractPDF (317.4 KB)References
Low frequency noise of a 980 nm InGaAs/GaAs strained quantum well laser p. 1739 B. Orsal, J. M. Peransin, P. Signoret and K. Daulasim DOI: https://doi.org/10.1051/jp3:1993234 AbstractPDF (466.3 KB)References
Parasitic element influence on laser driver performances for 1.3 μm fiber optical communication p. 1751 N. Hassaine, K. Sauv, A. Konczykowska and R. Lefevre DOI: https://doi.org/10.1051/jp3:1993235 AbstractPDF (299.0 KB)References
High speed ( GHz) InGaAs/InP avalanche photodiodes grown by gas source molecular beam epitaxy with a thin quaternary grading layer for high bit rate ( Gbit/s) systems p. 1761 G. Ripoche, J.-L. Peyre, M. Lambert and S. Mottet DOI: https://doi.org/10.1051/jp3:1993102 AbstractPDF (352.5 KB)References
An electrooptic switching structure on III-V semiconductors using the coherent coupling of radiation modes p. 1769 Diaa Khalil and Smail Tedjini DOI: https://doi.org/10.1051/jp3:1993236 AbstractPDF (457.1 KB)References
Spectral responses in near-infrared of the mixed compounds III-V, ternary and quaternary, based on GaSb p. 1777 B. Mbow, N. Rezzoug, C. Peremarti, A. Mezerreg and C. Llinares DOI: https://doi.org/10.1051/jp3:1993109 AbstractPDF (315.3 KB)References
Low dimensionality semiconductors: modelling of excitons via a fractional-dimensional space p. 1783 P. Christol, P. Lefebvre and H. Mathieu DOI: https://doi.org/10.1051/jp3:1993237 AbstractPDF (365.8 KB)References
Characterization of III-V materials by optical interferometry p. 1791 P. C. Montgomery, P. Vabre, D. Montaner and J. P. Fillard DOI: https://doi.org/10.1051/jp3:1993238 AbstractPDF (820.4 KB)References
Dislocation slipping, a new technique to produce step-like surfaces, compatible with quantum confinement sizes p. 1803 F. Voillot, M. Goiran, C. Guasch, J. P. Peyrade, L. Dinh, A. Rocher and E. Bedel DOI: https://doi.org/10.1051/jp3:1993239 AbstractPDF (557.6 KB)References
Electronic properties of strained heterostructures p. 1809 Moulay Driss Rahmani and Pierre Masri DOI: https://doi.org/10.1051/jp3:1993240 AbstractPDF (493.8 KB)References
Characterization of Ga1-xInxSb thin layers grown on GaAs substrate by infrared reflectivity p. 1819 A. Mezerreg, C. Llinares, N. Rezzoug and B. Mbow DOI: https://doi.org/10.1051/jp3:1993241 AbstractPDF (261.2 KB)References
Low noise ohmic contacts on n and p type GaSb p. 1825 M. Rolland, S. Gaillard, E. Villemain, D. Rigaud and M. Valenza DOI: https://doi.org/10.1051/jp3:1993242 AbstractPDF (329.4 KB)References
A vibration sensor, using telecommunication grade monomode fiber, immune to temperature variations p. 1835 F. Pigeon, S. Pelissier, A. Mure-Ravaud, H. Gagnaire, , S. I. Hosain and C. Veillas DOI: https://doi.org/10.1051/jp3:1993243 AbstractPDF (191.4 KB)References
Dispositif d'étude des décharges couronnes dans les gaz à pression élevée ou liquéfiés p. 1839 C. Marteau, G. Laulier, N. Bonifaci and A. Denat DOI: https://doi.org/10.1051/jp3:1993244 AbstractPDF (437.1 KB)References
Thermal modelling for an induction motor p. 1849 R. Glises, A. Miraoui and J. M. Kauffmann DOI: https://doi.org/10.1051/jp3:1993245 AbstractPDF (533.6 KB)References
Spectral impedance boundary condition (SIBC) method for a spherical perfect electric conductor (PEC) with an uniform biisotropic coating p. 1861 Dajun Cheng, Yushen Zhao and Weigan Lin DOI: https://doi.org/10.1051/jp3:1993246 AbstractPDF (461.9 KB)References
Atomic oxygen recombination at the wall in a time afterglow p. 1871 L. Magne, H. Coitout, G. Cernogora and G. Gousset DOI: https://doi.org/10.1051/jp3:1993247 AbstractPDF (954.3 KB)References
An improved directional growth apparatus for liquid crystals: applications to thermotropic and lyotropic systems p. 1891 P. Oswald, M. Moulin, P. Metz, J. C. Géminard, P. Sotta and L. Sallen DOI: https://doi.org/10.1051/jp3:1993248 AbstractPDF (1.267 MB)References
Free Access Erratum Erratum: The frequency control of laser diodes p. 1909 M. de Labachelerie, C. Latrasse, P. Kemssu and P. Cerez DOI: https://doi.org/10.1051/jp3:1993277 AbstractPDF (36.81 KB)