J. Phys. III France
Volume 3, Numéro 12, December 1993
Page(s) 2211 - 2220
DOI: 10.1051/jp3:1993270
J. Phys. III France 3 (1993) 2211-2220

Ballistic electron emission microscopy of the Au-Si (100) interface

R. Coratger, F. Ajustron and J. Beauvillain

CEMES-LOE/CNRS, 29 rue J. Marvig, B.P. 4347, 31055 Toulouse, France

(Received 24 May 1993, revised 2 September 1993, accepted 24 September 1993)

In this paper, experiments performed on Au-Si (100) junctions by Ballistic Electron Emission Microscopy (BEEM), a method for studying the metal -semiconductor interface, are presented. BEEM spectra show a characteristic threshold that yields the Schottky barrier height at the interface. The average barrier height is found to be lower than the usual values of Au-Si contacts. BEEM images result from the spatial variations of the current in the semiconductor and present unusual local contrasts. These phenomena are analysed in terms of interface quality.

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