J. Phys. III France
Volume 6, Numéro 12, December 1996
Page(s) 1705 - 1718
DOI: 10.1051/jp3:1996209
J. Phys. III France 6 (1996) 1705-1718

Transient Photo Conductivity Decay Study on Polycrystalline Silicon

V. Subramanian and J. Sobhanadri

Department of Physics, Indian Institute of Technology Madras 600 036, India

(Received 15 January 1996, revised 25 June 1996, accepted 5 September 1996)

The decay time constants of the transient photo conductivity for six polycrystalline silicon wafers of different grain sizes are analyzed as a function of temperature (90 to 450 K). The photo conductivity decay is split into three components, namely, surface, shallow traps and deep traps in grain boundary, which are analyzed in terms of the effect of surface recombination velocity, changes in carrier mobility and grain boundaries. This is utilized to evaluate the temperature dependence of mobility and grain boundary potential in polysilicon samples.

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