J. Phys. III France
Volume 7, Numéro 7, July 1997
Page(s) 1469 - 1486
DOI: 10.1051/jp3:1997200
J. Phys. III France 7 (1997) 1469-1486

Electrical and Structural Properties of Oxygen-Precipitation Induced Extended Defects in Silicon

C. Claeys, E. Simoen and J. Vanhellemont

IMEC, Kapeldreef 75, 3001 Leuven, Belgium

(Received 3 October 1996, revised 13 December 1996 and 14 March 1997, accepted 2 April 1997)

Although the oxygen precipitation process has been extensively studied during the last two decades, there still exists controversy concerning the electrical activity of the precipitates and the associated extended defect complexes. Therefore in the present study a unique combination of complementary characterization techniques is used to gain a better insight into the structural and electrical properties of oxygen-precipitation induced extended defects. TEM and LST are used for the structural analyses, while DLTS, PL, lifetime measurements, EBIC analyses and low frequency noise spectroscopy are used for the electrical characterization. The experimental observations are compared with relevant data available in the literature. Strong evidence is given that in clean processed wafers, the dominant recombination activity is associated with the dislocations, rather than with the precipitates themselves.

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