Numéro |
J. Phys. III France
Volume 7, Numéro 12, December 1997
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Page(s) | 2309 - 2316 | |
DOI | https://doi.org/10.1051/jp3:1997260 |
J. Phys. III France 7 (1997) 2309-2316
Heteroepitaxy of Cubic GaN
A. Trampert, O. Brandt, H. Yang and K.H. PloogPaul-Drude-Institut f$\ddot{\rm u}$r Festk$\ddot{\rm o}$rperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
(Received 3 October 1996, revised 9 May 1997, accepted 29 August 1997)
Abstract
We report on the epitaxial growth and the microstructure of cubic CaN. The layers investigated are deposited by plasma-assisted
molecular beam epitaxy on GaAs (001) and (311)A substrates. Transmission electron microscopy reveals that, despite of the
extreme lattice
mismatch between these two materials, GaN grows in the metastable cubic phase with a welldefined orientation-relationship
to the substrate and a sharp heteroboundary. This preference of the metastable phase and its epitaxial orientation originate
in the initial stage of growth which is discussed in connection with a coincidence lattice for the investigated interface
structures.
© Les Editions de Physique 1997