J. Phys. III France
Volume 7, Numéro 12, December 1997
Page(s) 2361 - 2366
DOI: 10.1051/jp3:1997103
J. Phys. III France 7 (1997) 2361-2366

Thermal Behaviour of Deep Levels at Dislocations in n-Type Silicon

D. Cavalcoli1, A. Cavallini1 and E. Gombia2

1  INFM and Department of Physics, University of Bologna, viale B. Pichat 6/II, 40127 Bologna, Italy
2  CNR MASPEC Institute, via Chiavari 18/A, 43100 Parma, Italy

(Received 3 October 1996, accepted 21 August 1997)

The thermal behaviour of deformation-induced traps in plastically deformed n-type silicon has been investigated via Deep Level Transient Spectroscopy. Among the four traps usually detected in plastically deformed silicon only two have been found to survive upon annealing: trap A and trap C located at 0.18-0.23 eV and 0.38-0.43 eV from the conduction band edge, respectively. The last one has been related to dislocations.

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