| Numéro |
J. Phys. III France
Volume 7, Numéro 12, December 1997
|
|
|---|---|---|
| Page(s) | 2361 - 2366 | |
| DOI | https://doi.org/10.1051/jp3:1997103 | |
DOI: 10.1051/jp3:1997103
J. Phys. III France 7 (1997) 2361-2366
1 INFM and Department of Physics, University of Bologna, viale B. Pichat 6/II, 40127 Bologna, Italy
2 CNR MASPEC Institute, via Chiavari 18/A, 43100 Parma, Italy
© Les Editions de Physique 1997
J. Phys. III France 7 (1997) 2361-2366
Thermal Behaviour of Deep Levels at Dislocations in n-Type Silicon
D. Cavalcoli1, A. Cavallini1 and E. Gombia21 INFM and Department of Physics, University of Bologna, viale B. Pichat 6/II, 40127 Bologna, Italy
2 CNR MASPEC Institute, via Chiavari 18/A, 43100 Parma, Italy
(Received 3 October 1996, accepted 21 August 1997)
Abstract
The thermal behaviour of deformation-induced traps in plastically deformed n-type silicon has been investigated via Deep Level Transient Spectroscopy. Among the four traps usually detected in plastically deformed silicon only two have been
found to survive upon annealing: trap A and trap C located at 0.18-0.23 eV and 0.38-0.43 eV from the conduction band edge,
respectively. The last one has been related to dislocations.
© Les Editions de Physique 1997