| Numéro |
J. Phys. III France
Volume 2, Numéro 8, August 1992
|
|
|---|---|---|
| Page(s) | 1445 - 1452 | |
| DOI | https://doi.org/10.1051/jp3:1992189 | |
J. Phys. III France 2 (1992) 1445-1452
Selective and epitaxial deposition of
-FeSi
2 onto silicon by RTP-CVD
J.L. Regolini, F. Trincat, I. Berbezier, J. Palleau, J. Mercier and D. Bensahel France Telecom, Centre National d'Etudes des Télécommunications, BP 98, 38243 Meylan Cedex, France
(Received 1st February, accepted 13 March 1992)
Abstract
We present the preparation for the first time of selective and epitaxial
-FeSi
2 on oxidized and patterned
4''-silicon wafers. These layers are obtained by Low Pressure Chemical Vapor Deposition using a Rapid Thermal Processing (RTP)
system and in a temperature/time range of 750-850°C / 2 minutes. The iron source is a chlorination chamber where high purity
iron is heated under HCl/Ar or Cl
2/Ar gas in order to form volatile chlorinated iron species which are then transported into the reaction chamber. The layers
obtained are single crystal islands most of them oriented with the substrate. They are P-type as deduced from electrical results
performed on layers grown on N- and P-type substrates (diode and ohmic contact respectively). Structural results and selectivity
of this RTP-CVD
-FeSi
2 will be presented and discussed.
© Les Editions de Physique 1992