J. Phys. III France
Volume 2, Numéro 8, August 1992
Page(s) 1445 - 1452
DOI: 10.1051/jp3:1992189
J. Phys. III France 2 (1992) 1445-1452

Selective and epitaxial deposition of $\beta$-FeSi 2 onto silicon by RTP-CVD

J.L. Regolini, F. Trincat, I. Berbezier, J. Palleau, J. Mercier and D. Bensahel

France Telecom, Centre National d'Etudes des Télécommunications, BP 98, 38243 Meylan Cedex, France

(Received 1st February, accepted 13 March 1992)

We present the preparation for the first time of selective and epitaxial $\beta$-FeSi 2 on oxidized and patterned 4''-silicon wafers. These layers are obtained by Low Pressure Chemical Vapor Deposition using a Rapid Thermal Processing (RTP) system and in a temperature/time range of 750-850°C / 2 minutes. The iron source is a chlorination chamber where high purity iron is heated under HCl/Ar or Cl 2/Ar gas in order to form volatile chlorinated iron species which are then transported into the reaction chamber. The layers obtained are single crystal islands most of them oriented with the substrate. They are P-type as deduced from electrical results performed on layers grown on N- and P-type substrates (diode and ohmic contact respectively). Structural results and selectivity of this RTP-CVD $\beta$-FeSi 2 will be presented and discussed.

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