| Numéro |
J. Phys. III France
Volume 4, Numéro 9, September 1994
|
|
|---|---|---|
| Page(s) | 1559 - 1564 | |
| DOI | https://doi.org/10.1051/jp3:1994222 | |
DOI: 10.1051/jp3:1994222
J. Phys. III France 4 (1994) 1559-1564
1 Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
2 Philips Analytical X-Ray B.V., Lelyweg 1, 7602 EA Almelo, The Netherlands
© Les Editions de Physique 1994
J. Phys. III France 4 (1994) 1559-1564
Influence of roughness profile on reflectivity and angle-dependent X-ray fluorescence
D.K.G. de Boer1, A.J.G. Leenaers1 and W.W. van den Hoogenhof21 Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
2 Philips Analytical X-Ray B.V., Lelyweg 1, 7602 EA Almelo, The Netherlands
(Received 19 November 1993, accepted 3 March 1994)
Abstract
The theory of X-ray scattering from rough interfaces using the second-order distorted-wave Born approximation is reviewed.
For specular reflectivity a new expression is given which smoothly connects the Névot-Croce and Debye-Waller expressions.
The shape, of the reflectivity curve depends not only on the average roughness, but also on the lateral correlation of the
roughness profile. Using the same theory, the several ways in which roughness can influence angle-dependent X-ray fluorescence
are evaluated. Finally, possible shapes for the roughness correlation function are discussed.
© Les Editions de Physique 1994