| Issue |
J. Phys. III France
Volume 5, Number 2, February 1995
|
|
|---|---|---|
| Page(s) | 197 - 202 | |
| DOI | https://doi.org/10.1051/jp3:1995119 | |
DOI: 10.1051/jp3:1995119
J. Phys. III France 5 (1995) 197-202Jumps and Hysteresis Effects in
Ru-Juan Zhan1, 2 and Xi-Cheng Jiang1
1 Department of Modern Physics, University of Science and Technologie of China
2 Structure Research Laboratory, Chinese Academy of Science, Hefei, Anhui 230026, P.R. China
© Les Editions de Physique 1995
J. Phys. III France 5 (1995) 197-202
Jumps and Hysteresis Effects in
-
Plasma Discharges
Ru-Juan Zhan1, 2 and Xi-Cheng Jiang1
1 Department of Modern Physics, University of Science and Technologie of China
2 Structure Research Laboratory, Chinese Academy of Science, Hefei, Anhui 230026, P.R. China
(Received 30 May 1994, revised 2 September 1994 and 2 November 1994, accepted 10 November 1994)
Abstract
In typical conditions of diamond film synthesis in a EACVD device (Electron-Assisted Chemical Vapor Deposition), we report
on the sudden jumps, bistability, multistability and negative resistance phenomena in methane-hydrogen mixture discharge plasma.
We studied the variations of these phenomena with gas pressure, filament current. The difference of discharge characteristic
between pure hydrogen and methane-hydrogen mixture system is presented.
© Les Editions de Physique 1995