An ${\sl Ab}~{\sl Initio}$ Study of the 90° Partial Dislocation Core in Diamond p. 1381 P.K. Sitch, R. Jones, S. Öberg and M.I. Heggie DOI: https://doi.org/10.1051/jp3:1997193 AbstractPDF (415.9 KB)References
Deep-Level Transient-Spectroscopy for Localized States at Extended Defects in Semiconductors p. 1389 H. Hedemann and W. Schröter DOI: https://doi.org/10.1051/jp3:1997194 AbstractPDF (556.9 KB)References
Energy Levels Associated with Extended Defects in Plastically Deformed n-Type Silicon p. 1399 D. Cavalcoli, A. Cavallini and E. Gombia DOI: https://doi.org/10.1051/jp3:1997195 AbstractPDF (607.4 KB)References
Conductivity and Photoconductivity at Dislocations p. 1411 R. Labusch DOI: https://doi.org/10.1051/jp3:1997196 AbstractPDF (768.7 KB)References
Non-Destructive Techniques for Identification and Control of Processing Induced Extended Defects in Silicon and Correlation with Device Yield p. 1425 J. Vanhellemont, S. Milita, M. Servidori, V. Higgs, G. Kissinger, E. Gramenova, E. Simoen and P. Jansen DOI: https://doi.org/10.1051/jp3:1997197 AbstractPDF (855.0 KB)References
Mechanical Properties and Dislocation Dynamics in III-V Compounds p. 1435 I. Yonenaga DOI: https://doi.org/10.1051/jp3:1997198 AbstractPDF (885.4 KB)References
High Resolution Electron Microscopic Studies of the Atomistic Glide Processes in Semiconductors p. 1451 K. Maeda, M. Inoue, K. Suzuki, H. Amasuga, M. Nakamura and E. Kanematsu DOI: https://doi.org/10.1051/jp3:1997199 AbstractPDF (1.277 MB)References
Electrical and Structural Properties of Oxygen-Precipitation Induced Extended Defects in Silicon p. 1469 C. Claeys, E. Simoen and J. Vanhellemont DOI: https://doi.org/10.1051/jp3:1997200 AbstractPDF (1.249 MB)References
Passivation of Extended Defects in Silicon by Catalytically Dissociated Molecular Hydrogen p. 1487 S. Binetti, S. Basu, M. Acciarri and S. Pizzini DOI: https://doi.org/10.1051/jp3:1997201 AbstractPDF (505.7 KB)References
Interaction of Copper with Dislocations in GaAs p. 1495 H.S. Leipner, R. Scholz, F. Syrowatka, H. Uniewski and J. Schreiber DOI: https://doi.org/10.1051/jp3:1997202 AbstractPDF (766.9 KB)References
Localization of Y Luminescence at Glide Dislocations in Cadmium Telluride p. 1505 S. Hildebrandt, H. Uniewski, J. Schreiber and H.S. Leipner DOI: https://doi.org/10.1051/jp3:1997203 AbstractPDF (943.4 KB)References
Aharonov-Bohm Interference of Holes at Dislocations in Lattice-Mismatched Heterostructures p. 1515 T. Figielski, T. Wosiński and A. Mąkosa DOI: https://doi.org/10.1051/jp3:1997204 AbstractPDF (361.3 KB)References
Metal-n-InP Rectifying Properties Enhancement with Zn Based Metallizations and Diffusion at Moderate Annealing Temperatures p. 1523 F. Barbarin, C. Guillot, J. Achard, M. Dugay, B. Lauron and D.Z. Kim DOI: https://doi.org/10.1051/jp3:1997205 AbstractPDF (818.3 KB)References
Dérives thermiques du capteur de pression capacitif microélectronique p. 1537 A. Ettouhami, A. Essaid, N. Ouakrim, L. Michel and M. Limouri DOI: https://doi.org/10.1051/jp3:1997206 AbstractPDF (656.7 KB)References
Homogénéisation des matériaux constituant les condensateurs bobinés à films métallisés p. 1549 Ch. Joubert, G. Rojat and A. Béroual DOI: https://doi.org/10.1051/jp3:1997207 AbstractPDF (528.5 KB)References
Réfraction des ondes sonores émises par une torche à plasma p. 1561 R. Pauvit, Ch. de Izarra and O. Vallée DOI: https://doi.org/10.1051/jp3:1997208 AbstractPDF (537.2 KB)References
Évaluation pratique des performances d'une machine Stirling de taille reduite fonctionnant en cycle frigorifique p. 1571 Ph. Nika and F. Lanzetta DOI: https://doi.org/10.1051/jp3:1997209 AbstractPDF (984.0 KB)References
Simulations et optimisation des transferts thermochimiques dans un réacteur solide-gaz p. 1593 A. Forestier, P. Forges and M. Amouroux DOI: https://doi.org/10.1051/jp3:1997211 AbstractPDF (1.188 MB)References
Synthèse de la commande d'un onduleur de courant triphasé p. 1615 J.P. Cambronne and J.P. Hautier DOI: https://doi.org/10.1051/jp3:1997212 AbstractPDF (1.131 MB)References
