Journal de Physique III

An ${\sl Ab}~{\sl Initio}$ Study of the 90° Partial Dislocation Core in Diamond p. 1381

P.K. Sitch, R. Jones, S. Öberg et M.I. Heggie

DOI: https://doi.org/10.1051/jp3:1997193

Deep-Level Transient-Spectroscopy for Localized States at Extended Defects in Semiconductors p. 1389

H. Hedemann et W. Schröter

DOI: https://doi.org/10.1051/jp3:1997194

Energy Levels Associated with Extended Defects in Plastically Deformed n-Type Silicon p. 1399

D. Cavalcoli, A. Cavallini et E. Gombia

DOI: https://doi.org/10.1051/jp3:1997195

Conductivity and Photoconductivity at Dislocations p. 1411

R. Labusch

DOI: https://doi.org/10.1051/jp3:1997196

Non-Destructive Techniques for Identification and Control of Processing Induced Extended Defects in Silicon and Correlation with Device Yield p. 1425

J. Vanhellemont, S. Milita, M. Servidori, V. Higgs, G. Kissinger, E. Gramenova, E. Simoen et P. Jansen

DOI: https://doi.org/10.1051/jp3:1997197

Mechanical Properties and Dislocation Dynamics in III-V Compounds p. 1435

I. Yonenaga

DOI: https://doi.org/10.1051/jp3:1997198

High Resolution Electron Microscopic Studies of the Atomistic Glide Processes in Semiconductors p. 1451

K. Maeda, M. Inoue, K. Suzuki, H. Amasuga, M. Nakamura et E. Kanematsu

DOI: https://doi.org/10.1051/jp3:1997199

Electrical and Structural Properties of Oxygen-Precipitation Induced Extended Defects in Silicon p. 1469

C. Claeys, E. Simoen et J. Vanhellemont

DOI: https://doi.org/10.1051/jp3:1997200

Passivation of Extended Defects in Silicon by Catalytically Dissociated Molecular Hydrogen p. 1487

S. Binetti, S. Basu, M. Acciarri et S. Pizzini

DOI: https://doi.org/10.1051/jp3:1997201

Interaction of Copper with Dislocations in GaAs p. 1495

H.S. Leipner, R. Scholz, F. Syrowatka, H. Uniewski et J. Schreiber

DOI: https://doi.org/10.1051/jp3:1997202

Localization of Y Luminescence at Glide Dislocations in Cadmium Telluride p. 1505

S. Hildebrandt, H. Uniewski, J. Schreiber et H.S. Leipner

DOI: https://doi.org/10.1051/jp3:1997203

Aharonov-Bohm Interference of Holes at Dislocations in Lattice-Mismatched Heterostructures p. 1515

T. Figielski, T. Wosiński et A. Mąkosa

DOI: https://doi.org/10.1051/jp3:1997204

Metal-n-InP Rectifying Properties Enhancement with Zn Based Metallizations and Diffusion at Moderate Annealing Temperatures p. 1523

F. Barbarin, C. Guillot, J. Achard, M. Dugay, B. Lauron et D.Z. Kim

DOI: https://doi.org/10.1051/jp3:1997205

Dérives thermiques du capteur de pression capacitif microélectronique p. 1537

A. Ettouhami, A. Essaid, N. Ouakrim, L. Michel et M. Limouri

DOI: https://doi.org/10.1051/jp3:1997206

Homogénéisation des matériaux constituant les condensateurs bobinés à films métallisés p. 1549

Ch. Joubert, G. Rojat et A. Béroual

DOI: https://doi.org/10.1051/jp3:1997207

Réfraction des ondes sonores émises par une torche à plasma p. 1561

R. Pauvit, Ch. de Izarra et O. Vallée

DOI: https://doi.org/10.1051/jp3:1997208

Évaluation pratique des performances d'une machine Stirling de taille reduite fonctionnant en cycle frigorifique p. 1571

Ph. Nika et F. Lanzetta

DOI: https://doi.org/10.1051/jp3:1997209

Simulations et optimisation des transferts thermochimiques dans un réacteur solide-gaz p. 1593

A. Forestier, P. Forges et M. Amouroux

DOI: https://doi.org/10.1051/jp3:1997211

Synthèse de la commande d'un onduleur de courant triphasé p. 1615

J.P. Cambronne et J.P. Hautier

DOI: https://doi.org/10.1051/jp3:1997212