| Numéro |
J. Phys. III France
Volume 2, Numéro 8, August 1992
|
|
|---|---|---|
| Page(s) | 1439 - 1444 | |
| DOI | https://doi.org/10.1051/jp3:1992188 | |
J. Phys. III France 2 (1992) 1439-1444
Synthesis and properties of highly c-axis oriented PbTiO 3 thin films prepared by and MOCVD method
Xian-tong Chen1, Hisanori Yamane1 and Kiyoshi Kaya21 Institute for materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, Japan
2 Kawasaki Technical Laboratory, Asahi Chemical Industry Co., Ltd., 1-3-1, Yakou, Kawasaki-ku, Kawasaki 210, Japan
(Received 1st February, accepted 18 April 1992)
Abstract
Thin films of PbTiO3 were prepared on MgO(100) substrates by chemical vapor deposition using Pb(C
2H
5)
4 (PbEt) and Ti(OC
3H
7)
4 (TTIP) as sources. With decreasing Pb/Ti molar ratio from 1.2 to 1 the degree of c-axis orientation increased. Highly c-axis
oriented PbTiO3 thin films were epitaxially grown at 500°C and 2 kPa. The films were transparent and had a refractive index
(n) of 2.64 at 632.8 nm which was about 2% lower than that of a single PbTiO3 crystal (
2.7). The films prepared on (100)-oriented Pt electrodes deposited on MgO(100) substrates at 600°C and 2 kPa also showed a prominent
c-axis orientation and had a dielectric constant of 90.
© Les Editions de Physique 1992