| Numéro |
J. Phys. III France
Volume 4, Numéro 9, September 1994
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|---|---|---|
| Page(s) | 1565 - 1571 | |
| DOI | https://doi.org/10.1051/jp3:1994223 | |
DOI: 10.1051/jp3:1994223
J. Phys. III France 4 (1994) 1565-1571
1 Forschungsinstitut für Optoelektronik, Johannes-Kepler-Universität, Altenbergerstraße 69, 4040 Linz-Auhof, Austria
2 Dept. of Solid State Physics, The Masaryk University, Kotlárská 2, 61137 Brno, Czech Republic
3 Philips Analytical X-Ray BV, 7602 EA Almelo, Lelyweg 1, The Netherlands
© Les Editions de Physique 1994
J. Phys. III France 4 (1994) 1565-1571
X-ray characterization of semiconductor surfaces and interfaces
W. Plotz1, V. Holy2, W. V. D. Hoogenhof3 and K. Lischka11 Forschungsinstitut für Optoelektronik, Johannes-Kepler-Universität, Altenbergerstraße 69, 4040 Linz-Auhof, Austria
2 Dept. of Solid State Physics, The Masaryk University, Kotlárská 2, 61137 Brno, Czech Republic
3 Philips Analytical X-Ray BV, 7602 EA Almelo, Lelyweg 1, The Netherlands
(Received 19 November 1993, Revised 9 March 1994 and 3 June 1994, accepted 6 June 1994)
Abstract
A method for the characterization of surfaces and interfaces on a nanometer scale by combining specular and nonspecular glancing
incidence X-Ray scattering is presented. The application of the method to crystalline silicon, polycrystalline silicon, and
a thin gold layer on a silicon substrate is reported.
© Les Editions de Physique 1994