J. Phys. III France
Volume 4, Numéro 9, September 1994
Page(s) 1565 - 1571
DOI: 10.1051/jp3:1994223
J. Phys. III France 4 (1994) 1565-1571

X-ray characterization of semiconductor surfaces and interfaces

W. Plotz1, V. Holy2, W. V. D. Hoogenhof3 and K. Lischka1

1  Forschungsinstitut für Optoelektronik, Johannes-Kepler-Universität, Altenbergerstraße 69, 4040 Linz-Auhof, Austria
2  Dept. of Solid State Physics, The Masaryk University, Kotlárská 2, 61137 Brno, Czech Republic
3  Philips Analytical X-Ray BV, 7602 EA Almelo, Lelyweg 1, The Netherlands

(Received 19 November 1993, Revised 9 March 1994 and 3 June 1994, accepted 6 June 1994)

A method for the characterization of surfaces and interfaces on a nanometer scale by combining specular and nonspecular glancing incidence X-Ray scattering is presented. The application of the method to crystalline silicon, polycrystalline silicon, and a thin gold layer on a silicon substrate is reported.

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